Top N type Ge Secrets

≤ 0.15) is epitaxially developed with a SOI substrate. A thinner layer of Si is grown on this SiGe layer, then the construction is cycled via oxidizing and annealing stages. A result of the preferential oxidation of Si around Ge [sixty eight], the first Si1–Polycrystalline Ge skinny films have attracted sizeable focus as opportunity products to

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